EDUCATION

PhD in Physics, Ioffe Physical-Technical Institute, Leningrad, Russia, 1989
Dissertation: “Investigation of structure and properties of manganese center in gallium arsenide”,
Advisor: Prof. A. A. Gutkin
M.S. in Physics of Semiconductors, Kalinin Polytechnic Institute, Leningrad, Russia, 1982

RESEARCH

Photoluminescence from point defects in semiconductors. Electrical and optical properties of wide-bandgap semiconductors such as GaN and ZnO.

SYLLABI 

SELECTED PUBLICATIONS

M. A. Reshchikov, Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors, J. Appl. Phys. 115, 012010 (2014).
M. A. Reshchikov, “Two-step thermal quenching of photoluminescence in Zn-doped GaN”, Phys. Rev. B 85, 245203 (2012).
M. A. Reshchikov, M. A. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, and A.Waag, “Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Zn and Si”, J. Appl. Phys. 111, 073106 (2012).
M. A. Reshchikov, M. Foussekis, and A. A. Baski, “Surface photovoltage in undoped n-type GaN”, J. Appl. Phys. 107, 113535 (2010).
M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN”, J. Appl. Phys. 97, 061301 (2005).
M. A. Reshchikov and R. Y. Korotkov, “Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films”, Phys. Rev. B 64, 115205 (2001).
M. A. Reshchikov, G.-C. Yi, and B. W. Wessels, “Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities”, Phys. Rev. B 59, 13176 (1999).

PROFESSIONAL APPOINTMENTS

2010-present – Associate Professor, VCU Department of Physics, Richmond, VA
2004-2010 Assistant Professor, VCU Department of Physics, Richmond, VA
1999-2004 Research Associate, VCU Department of Electrical Engineering, Richmond, VA
1997-1999 Research Associate, Northwestern University, Evanston, IL
1982-1997 Research Associate, Ioffe Physical-Technical Institute of Russian Academy of Sciences,