Photoluminescence

semiconductors

Education

• Ph.D., Physics, Ioffe Physical-Technical Institute, 1989
• M.S., Physics of Semiconductors, Kalinin Polytechnic Institute

Research Interests

• Point defects in semiconductors
• Photoluminescence from semiconductors

Selected Publications

• M. A. Reshchikov, M. Vorobiov, O. Andrieiev, D. O. Demchenko, B. McEwen, and F. Shahedipour-Sandvik, “Dual Nature of the BeGa Acceptor in GaN: Evidence from Photoluminescence”, Phys. Rev. B 108, 075202 (2023).
• M. A. Reshchikov, “On the Origin of the Yellow Luminescence Band in GaN”, Phys. Stat. Sol. (b) 260, 2200488 (2023).
• M. A. Reshchikov, “Photoluminescence from Vacancy-Containing Defects in GaN”, Phys. Stat. Sol. (a) 220, 2200402 (2023).
• M. A. Reshchikov, D. O. Demchenko, M. Vorobiov, O. Andrieiev, B. McEwen, F. Shahedipour-Sandvik, K. Sierakowski, P. Jaroszynski, and M. Bockowski. “Photoluminescence related to Ca in GaN”, Phys. Rev. B 106, 035206 (2022).
• M. A. Reshchikov, O. Andrieiev, M. Vorobiov, B. McEwen, F. Shahedipour-Sandvik, D. Ye, and D. O. Demchenko, “Stability of the CNHi complex and the BL2 luminescence band in GaN”, Phys. Stat. Sol. (b) 258, 2100392 (2021). Google Scholar: https://scholar.google.com/citations?user=hlQc5usAAAAJ&hl=en

Courses

• Senior Physics Lab
• Experimental Skills for Physicists
• Fundamentals of Semiconductor Nanostructures